Fabrication and Characterization of Gallium Nitride Nano-Wire Light-Emitting Tunneling Diodes
碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === In this thesis, we present the growth, analyzing, fabrication, and characterization of gallium nitride (GaN) nanowires light emitting devices. The growth of GaN nanowires structures was conducted in a home-built vapor-liquid-solid (V-L-S) system. The following...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22339783143816762377 |