Effect of Tensile Stress on MOS Capacitors with Ultra-thin Gate Oxide
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === In recent years, due to the advanced technology of semiconductor, there are great results in the scaling of MOS devices. Based on the International Technology Roadmap for Semiconductors (ITRS), the equivalent oxide thickness (EOT) should be 0.5 nm in 2012 and hi...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38307231051503938342 |