Growth and Characterization of Germanium Material on Insulator
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Abstract In order to overcome the nonideal effects in electronics devices caused by the device scaling down, silicon-on-insulator (SOI) material is an ideal substrate for devices fabrication. Silicon (Si) and germanium (Ge) are both group-IV material, and Ge p...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/39213117538667109575 |