Quantum Confined Stark Effect (QCSE) in Silicon-Germanium (SiGe) Electro-Absorption Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Optical communications have dominated the intermediate to long distance data transmission and also gradually replaced the metal interconnects for the short-distance links. The decreasing device size in silicon chips increases the interconnect resistance and henc...
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| Format: | Others |
| Language: | zh-TW |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68912652674397154480 |