Isolation Technique for SiGe Power Amplifiersand Simulation of Solar Cell Characteristics
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === In this thesis, an isolation technique for dual power amplifiers is introduced. For the isolation of dual power amplifiers, the equivalent coupling effect at 2.45GHz before laser cut is -24.7dB, after first laser cut is -27.2dB and after second laser cut is -29....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04113072391534573986 |