Simulation Study of Bulk FinFET and Ge Quantum Well pFET
碩士 === 國立臺灣大學 === 電機工程學研究所 === 96 === Bulk FinFET has advantages of heat dissipation, wafer cost, process compatibility and extendibility of conventional planar MOSFET technologies. The combination of recess channel array transistors (RCAT) technology and triple-gate in bulk silicon prove excellent...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/81706112428487610698 |