Synthesis of GaN and InGaN nanowires on the substrate by CVD in the furnace
碩士 === 國立臺灣科技大學 === 化學工程系 === 96 === gas and reactive gas flow rates was modulated to grow GaN nanowires. From analysis results, GaN nanowires were grown via vapor-solid (VS) growth mechanism and the growth direction along . The shapes and growth mechanism were related to the ammonium flow rates....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18726293395628261521 |