Study the Properties of Materials and Devices by X-ray Photoelectron Spectroscopy

• Main Authors: Yung-yu Hsu, 許永鈺
• Other Authors: Yian Tai
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/06902722685218903298

碩士 === 國立臺灣科技大學 === 化學工程系 === 96 === In this thesis, we use X-ray Photoelectron Spectroscopy (XPS) to study the chemical structures of thin film materials and devices, which are described below. The study of oxygen plasma treatment on ZnPc thin film solar cell, XPS data show that gold oxide formed on the surface of gold electrode, which might results in the reduction of sunlight reflection, increasing the photon absorption in the ZnPc layer. In addition, the junction resistant is suppressed by the intermixing of Au and ZnPc results from the oxygen plasma treatment. Both effects might cause the increasing in power conversion efficiency (PCE) of the solar cell. The nitridation of sapphire (Al2O3) at different treatment times leads to the different crystal structure of Indium nitride (InN) which grown on its top thereafter. The XPS results show that the crystallization of InN is attributed to three kinds of aluminum nitride species, namely AlOxNy:H, Al-N=H2 and AlN. The sinteration of cobalt tetramethoxyphenylporphrin (CoTMPP) at different temperatures were studied with XPS. The results show that the destruction of the bonding of CoTMPP occurred at high temperature (higher then 500oC). In addition, aromatic hydrocarbon could be converted into graphite structures, while the pyrrole ring of CoTMPP of converts into pyridine structure. For the study of zinc selenium (ZnSe) quantum dots (QDs) immobilization on SAM surface, XPS data reveal that QDs can be maintained on top of all kinds of SAM without penetration to the substrate.