| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 96 === ZnO thin films were deposited on (100) silicon substrates by capillaritron ion beam sputtering deposition. ZnO thin films were annealed in oxygen, nitrogen and in atmospheric condition at various temperatures. Effects of annealing on the properties of ZnO thin films are presented.
Annealing at 600°C causes residual tensile stress, which is caused by thermal stress. XRD results show that the as-deposited film has no preferential crystallographic orientations, while annealing at 800°C gives the strongest (002) diffraction peak. The as-deposited ZnO film does not show any PL emission. After annealing at 700˚C and higher, near-band-edge emission near 380 nm becomes discernable.
Annealing at 800°C in oxygen gives the lowest defect related deep level emission. As annealing temperature reaches 900°C and higher, NIR emission increases as annealing temperature increases, indicating the decomposition of ZnO. Grain size also increases as annealing temperature increases. However, as annealing temperature is higher than 1000˚C, surface roughness increases significantly.
ZnO thin films were prepared by capillaritron ion beam sputtering deposition. Post-growth annealing at 800°C in oxygen gives the highest percentage of oxygen incorporated into fully oxidized stoichiometric ZnO matrixes, lowest defect related deep level emission, and better crystalline quality, while an root mean square surface roughness less than 5 nm is achieved.
|
|---|
