The Study of the MIS Device with AlN Thin Film and Its Characterizations

碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 96 === The AlN thin film has been applied in high speed and high power advanced micro-electronic and photo-electronic devices with its excellent properties of thermal conductivity, chemical resistance, high band gap and high dielectric constant. In this t...

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Bibliographic Details
Main Authors: Wei-Huang Lin, 林偉湟
Other Authors: Ming-Chang Shih
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/74781645953863958874