| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === The ZnO thin film has been of great interest because of potential applications for optoelectronic devices. However, a p-type ZnO film conduction with low resistivity is difficult to achieve because of self-compensation effect of the opposite charge carriers and low solubility of the doping acceptors.
In this work, Lithium-doped ZnO films were grown on glass substrates by RF reactive magnetron sputtering using Zn:Li metal alloy target with several Li2CO3 piece on it. Then, zinc oxide film compositions were determined by ICP-MS. Elemental depth profiles were employed by SIMS analysis. The structure and crystallinity of zinc oxide films, the GIAXRD were used to characterize. Hot probes and Hall measurement were used to determined resistivity, carrier density and mobility. The UV-Visible spectrophotometer was used to measure the transparency of zinc oxide films with various wavelengths.
The GIAXRD analysis indicates that the ZnO:Li films have (002) preferred orientation. The optical transmission spectra show a high transmittance (~80%) in the visible region. The lowest resistivity of as-grown p-type ZnO:Li film is 4.72×10-1 ohm-cm. A p-type conductive behavior was confirmed by the hall-effect measurement for these ZnO:Li films with a carrier concentration of 2.47×1019cm-3 and hall mobility of 0.85 cm2/V-sec.
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