Temperature difference of substrate in Low Pressure Vacuum System

• Main Authors: Wen-Cheng Lee, 李文正
• Other Authors: Fuh-Fhyang Juang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/ztsect

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === As technologies advance, nano-size wires can be applied to semiconductors. From the 4-inch wafer manufacturing in the early age to the burgeoning 12-inch wafer production today, every transition to the next generation poses a great challenge to both equipment and processing for the industry that demands tremendous input of technologies and funding. Since heat is used in many processing stages of semiconductor production, temperature evenness of silicon wafer has always been a crucial factor in determining the yield rate of thermal processing and vapor deposition. This study attempts to analyze the factors affecting temperature evenness of server board by means of a self-made low-pressure vacuum system altering the following configurations (a) operating pressure inside process chamber; (b) process gas flow; (c) air-inlet altitude of reactor; and (d) parallel altitude between silicon wafer and reactor. The correlations are examined through cross validation and the result shows that: if gas diffusion does not occur between the shower and server board, the temperature of server board will remain rather stable although other mechanisms or configurations are altered. The reason behind this is that gas molecules do not pass the wafer surface and thus fail to transfer heat onto it. However, it is not the case that better temperature evenness can be achieved if reactor and server board are arranged at a parallel altitude, because process gas flow is also a crucial variable. In summery, various configurations collectively produce a cross impact on temperature evenness of server board. Therefore, in order to gain a more ideal uniform temperature zone, configuration combination and equipment adjustment shall be done for each processing, instead of altering individual mechanisms or configurations.