Interfacial properties of SiO2/Si and HfO2/Si Gate stacks
碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 96 === As CMOS devices are scaled down into nano-region, SiO2 dielectric is approaching its physical and electrical limits. High-k materials are recently employed by exploiting the increased physical thickness at the same equivalent oxide thickness. Hafnium di-oxid...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70619666124701524769 |