Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection
碩士 === 南台科技大學 === 電子工程系 === 96 === Leakage properties of nitride based photodetectors (PDs) subjected to Inductively Coupled Plasma (ICP) etching has been investigated by using Emission Microscopy Inspection. ICP etching would cause significant damage on GaN metal-semiconductor-metal (MSM) photodete...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72756248070315905243 |