Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection
碩士 === 南台科技大學 === 電子工程系 === 96 === Leakage properties of nitride based photodetectors (PDs) subjected to Inductively Coupled Plasma (ICP) etching has been investigated by using Emission Microscopy Inspection. ICP etching would cause significant damage on GaN metal-semiconductor-metal (MSM) photodete...
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ndltd-TW-096STUT04280022016-11-22T04:12:43Z http://ndltd.ncl.edu.tw/handle/72756248070315905243 Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection 以光激發顯微鏡觀測氮化物系列光檢測器之漏電分析 Kuan-Wei Lin 林冠緯 碩士 南台科技大學 電子工程系 96 Leakage properties of nitride based photodetectors (PDs) subjected to Inductively Coupled Plasma (ICP) etching has been investigated by using Emission Microscopy Inspection. ICP etching would cause significant damage on GaN metal-semiconductor-metal (MSM) photodetectors (PDs). The damage was proved to induce leakage current via the conductive surface of device by using emission microscopy inspection. However, the surface damage of MSM PDs can be partially recovered by depositing SiO2 passivation layer. The p-i-n PDs with SiO2 passivation layer either by E-beam SiO2 or Plasma Enhanced Chemical Vapor Deposited (PECVD) techniques were also fabricated and characterized. As for the passivation for p-i-n PDs, the effect is not significant in the reduction of dark current due to smaller etched area as compare to the whole area of p-i-n PDs. The reponsivities characteristics and leakage current path analysis of p-i-n PDs with different SiO2 passivation layers had also been investigated. The p-i-n PD served SiO2 passivation layer by PECVD technique collected the highest responsivity and the least leakage current. The leakage current path analysis of p-i-n PDs by EMMI technique had also been investigated. The p-i-n PD served SiO2 passivation layer by PECVD technique also collected the best observation result. We also performed stress experiment for p-i-n PDs to compare the effect of SiO2 passivation layer. The p-i-n PD served SiO2 passivation layer by PECVD technique remained better characteristics than other samples. In summary, the PD served SiO2 passivation by PECVD technique was proved to be a potential process to improve the reliability of p-i-n PDs. Yu-Zung Chiou 邱裕中 2008 學位論文 ; thesis 64 zh-TW |
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碩士 === 南台科技大學 === 電子工程系 === 96 === Leakage properties of nitride based photodetectors (PDs) subjected to Inductively Coupled Plasma (ICP) etching has been investigated by using Emission Microscopy Inspection. ICP etching would cause significant damage on GaN metal-semiconductor-metal (MSM) photodetectors (PDs). The damage was proved to induce leakage current via the conductive surface of device by using emission microscopy inspection. However, the surface damage of MSM PDs can be partially recovered by depositing SiO2 passivation layer. The p-i-n PDs with SiO2 passivation layer either by E-beam SiO2 or Plasma Enhanced Chemical Vapor Deposited (PECVD) techniques were also fabricated and characterized. As for the passivation for p-i-n PDs, the effect is not significant in the reduction of dark current due to smaller etched area as compare to the whole area of p-i-n PDs. The reponsivities characteristics and leakage current path analysis of p-i-n PDs with different SiO2 passivation layers had also been investigated. The p-i-n PD served SiO2 passivation layer by PECVD technique collected the highest responsivity and the least leakage current. The leakage current path analysis of p-i-n PDs by EMMI technique had also been investigated. The p-i-n PD served SiO2 passivation layer by PECVD technique also collected the best observation result. We also performed stress experiment for p-i-n PDs to compare the effect of SiO2 passivation layer. The p-i-n PD served SiO2 passivation layer by PECVD technique remained better characteristics than other samples. In summary, the PD served SiO2 passivation by PECVD technique was proved to be a potential process to improve the reliability of p-i-n PDs.
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author2 |
Yu-Zung Chiou |
author_facet |
Yu-Zung Chiou Kuan-Wei Lin 林冠緯 |
author |
Kuan-Wei Lin 林冠緯 |
spellingShingle |
Kuan-Wei Lin 林冠緯 Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection |
author_sort |
Kuan-Wei Lin |
title |
Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection |
title_short |
Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection |
title_full |
Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection |
title_fullStr |
Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection |
title_full_unstemmed |
Leakage Current Analysis of Nitride Based Photodetectors by Emission Microscopy Inspection |
title_sort |
leakage current analysis of nitride based photodetectors by emission microscopy inspection |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/72756248070315905243 |
work_keys_str_mv |
AT kuanweilin leakagecurrentanalysisofnitridebasedphotodetectorsbyemissionmicroscopyinspection AT línguānwěi leakagecurrentanalysisofnitridebasedphotodetectorsbyemissionmicroscopyinspection AT kuanweilin yǐguāngjīfāxiǎnwēijìngguāncèdànhuàwùxìlièguāngjiǎncèqìzhīlòudiànfēnxī AT línguānwěi yǐguāngjīfāxiǎnwēijìngguāncèdànhuàwùxìlièguāngjiǎncèqìzhīlòudiànfēnxī |
_version_ |
1718396570824605696 |