Resistance switching and carrier transportation characteristic of reactive-sputtered NiOx thin films
碩士 === 東海大學 === 物理學系 === 96 === The three-layers-stacked structure of metal/ transition-metal-oxide/ metal was known with the capability of resistance switching. The capability had transition metal oxide became the new material for investigation of resistive RAM. In 2004, I. G. Baek and his group fi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15867540264836601609 |