Design and Fabrication of Low-actuation Voltage RF Switch and Varactor by CMOS-MEMS Processes

碩士 === 國立臺北科技大學 === 機電整合研究所 === 96 === In the study, we use 0.35μm and 0.18μm CMOS-MEMS to design the DC-contact RF switch which has the advantages of small area、easy fabrication、low -voltage and high RF performance. The switch is compatible with CMOS process. The switches are actuated by electrosta...

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Bibliographic Details
Main Authors: Pei-Hao Lin, 林培豪
Other Authors: Jung-Tang Huang
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/df3xr7