Hot Carrier Effects on nMOSFETs Having Different Compositions of HfSiON Gate Dielectrics
碩士 === 國立臺北科技大學 === 機電整合研究所 === 96 === Below 45 nm generation, it is necessary to use high-κ gate dielectrics. The HfSiON is one of the most promising candidates because of its high thermal stability and high inversion layer mobility comparing to other gate dielectrics. But the quality and reliabili...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/476gzf |