Study of InGaN/GaN multilayer using x-ray.
碩士 === 淡江大學 === 物理學系碩士班 === 96 === X-ray diffraction (XRD) and X-ray reflectivity (XRR) are used to characterize the structure of the InGaN/GaN multiple quantum wells (MQWs) grown on the Al2O3 (0 0 1) substrate .Using these measurements, not only the layered structure of the MQWs is revealed c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79326480291203997876 |