Study of InGaN/GaN multilayer using x-ray.

• Main Authors: Chih-Hsien Ou, 歐致先
• Other Authors: 杜昭宏
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/79326480291203997876

碩士 === 淡江大學 === 物理學系碩士班 === 96 === X-ray diffraction (XRD) and X-ray reflectivity (XRR) are used to characterize the structure of the InGaN/GaN multiple quantum wells (MQWs) grown on the Al2O3 (0 0 1) substrate .Using these measurements, not only the layered structure of the MQWs is revealed clearly but also the In content χ of the InxGal-xN component can be determined reliably. The fitted results of XRD show that MQW widths are around 142.15nm (607), 144.75nm (608) and 148.81nm (609) that are very lost to the theoretical calculation as 142.6nm (607), 145.7nm (608) and 145.7nm (609).the data obtained from the reflectivity (XRR) measurements are in agreement with that obtained from XRD.