Study of InGaN/GaN multilayer using x-ray.

碩士 === 淡江大學 === 物理學系碩士班 === 96 === X-ray diffraction (XRD) and X-ray reflectivity (XRR) are used to characterize the structure of the InGaN/GaN multiple quantum wells (MQWs) grown on the Al2O3 (0 0 1) substrate .Using these measurements, not only the layered structure of the MQWs is revealed c...

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Bibliographic Details
Main Authors: Chih-Hsien Ou, 歐致先
Other Authors: 杜昭宏
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/79326480291203997876

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