An improved extraction method of the parasitic source/drain resistance for MOSFET''s
碩士 === 雲林科技大學 === 光學電子工程研究所 === 96 === Pocket implant structure of MOSFET’s improves some short-channel effects, but it also has disadvantages. For short channel devices, the drain current degradation is more related to parasitic source/drain resistance obviously. Therefore, the parameters of parasi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97143521288894416342 |