Study of Heat Flow in AlGaInP Light Emitting Diodes at Low Temperature
碩士 === 長庚大學 === 光電工程研究所 === 97 === Diode-forward voltage method was used to measure the dynamic of the junction temperature in AlGaInP/GaAs in light emitting diode over the temperature 64K~300K. Then, the thermal conductivity of the substrate was deduced from those data. The thermal conductivity was...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17039257603118769802 |