Characteristics of annealed AlGaN/GaN HEMTs structure
碩士 === 長庚大學 === 光電工程研究所 === 97 === The AlGaN/GaN HEMT structure in this investigation was growth by MOCVD. The carrier density was obtained by making Hall measurements and from capacitance–voltage (C–V) curves. In the experiment, the values were inconsistent. The carrier density varied with the surf...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21965570794626208513 |