Physical and Electrical Properties of High-k Tb2O3,TbTixOy and YbTixOy dielectrics SONOS-type memory devices
碩士 === 長庚大學 === 光電工程研究所 === 97 === In the traditional floating gate memory structure, when the tunneling oxide scaled down below 10nm, the stored charge in the poly-silicon floating gate may easily leak through the defects in the tunneling oxide. In order to solve the problem of this gate structure,...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02217542196353142245 |