The Electrical and Reliability Characteristics of Dysprosium Oxide and Holmium Oxide Gate Dielectrics
碩士 === 長庚大學 === 電子工程學研究所 === 97 === In this thesis, we selected two high-k materials as the gate dielectric of metal-oxide-semiconductor capacitors. One is dysprosium oxide (Dy2O3) and the other is holmium oxide (Ho2O3). Through PDA treatment, we analyzed its physical properties. We use X-ray diffra...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99786063321036846002 |