Optimization of W-Nanocrystal Memories by Co-Sputtering of W/Si and Post-Oxidation
碩士 === 長庚大學 === 電子工程學研究所 === 97 === Conventional Flash memory device is using continues floating gate as a storage units, which have many application in electrical products, including cell phone, i-pod and digital camera. There are some serious issues in operation voltage, device scaling and retenti...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/51216344259857911288 |