The Characterization of Fluorinated and Nitrided Al2O3 and Ge Nanocrystals and Flash Memory
博士 === 長庚大學 === 電子工程學研究所 === 97 === The characteristics of atomic‒layer‒deposited‒Al2O3 gate dielectrics with CF4 plasma surface treatment and fluorine implantation have been studied. Fluorine atoms were observed to be incorporated at bulk Al2O3 and piled-up at both Al/Al2O3 and Al2O3/Si interfaces....
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55117060240461955788 |