The Study of p-MOSFET Device with High-k Dielectric HfTiO Technology
碩士 === 中華大學 === 電機工程學系(所) === 97 === When the device dimension is scaled down, the thickness of the insulator layer is also reduced. Owing to the scaling of the oxide thickness, the increase of the oxide leakage current is inevitable. For minimizing the gate leakage current, many new materials are r...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13771092317323361597 |