Fabrication and Characterization Study of Ⅲ-Nitrides Based Metal-Semiconductor-Metal UV Detectors
碩士 === 中原大學 === 電子工程研究所 === 97 === In this thesis, Ⅲ-nitride materials, GaN and AlN, which uniquely present at the same time the excellent electronic and optoelectronic properties, were employed to fabricate the metal-semiconductor-metal (MSM) photodetectors for UV detection. AlN films were deposite...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31760359357363073712 |