Charge profiling of channel hot electron injection in NOI devices
博士 === 中原大學 === 電子工程研究所 === 97 === Recently, the discrete charge trapping non-volatile memory (NVM) devices received much attention due to their potential multi-bit storage in a unit cell. In contrast to those floating gates memories, oxide-nitride-oxide (ONO) charge trapping structures are explored...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03111439251666809903 |