Simulation of Punch Through Effect in Non-overlapped Implantation nMOSFETs

碩士 === 中原大學 === 電子工程研究所 === 97 === Memory development is an important indicator of the semiconductor industry. The process and performance improvement are always challenging topics. Non-Volatile Memories (NVMs) have been developed for decades, and received much attention in mobile and portable appli...

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Bibliographic Details
Main Authors: Chih-Wei Yang, 楊志偉
Other Authors: Erik Jeng
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/69628461824900403891