Investigation of Characteristics for Al/LPD-TiO2/SiGe MOS Device
碩士 === 大葉大學 === 電機工程學系 === 97 === Titanium oxide (TiO2 ) has been grown on SiGe film by using liquid-phase deposition ( LPD ) method with (NH4)2TiF6 and H3BO3 at room temperature. In this study, the concentration of (NH4)2TiF6 and H3BO3 were 0.05 and 0.25 M, respectively, and the temperature were 30...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21318787601238747605 |