Effect of Metal-Induced Crystallization on Porous Silicon/n-Si Hetrojunction

碩士 === 大葉大學 === 電機工程學系 === 97 === In this experiment, porous silicon (PS)/n-Si structure has been prepared by using electrochemical anodization method at room temperature; then, the solution-based metal induced crystallization (SMIC) of porous silicon thin film was processed with various concentrati...

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Bibliographic Details
Main Authors: Pei-Yuan Hsu, 徐培淵
Other Authors: 黃俊達
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/69909575253605753166