Investigation of Characteristics for Al/LPD-SiO2/Ge MOS Device
碩士 === 大葉大學 === 電機工程學系 === 97 === The liquid-phase-deposition (LPD) oxide has been grown on Ge substrate under room temperature by using an aqueous solution of supersaturated hydrofluosilicic acid (H2SiF6) and boric acid (H3BO3). Before depositing silicon dioxide (SiO2), the Ge wafers were treated w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80148472307599432440 |