Diagnosis of the AlInGaP LED Epiwafer by Heat Treatment and Photoluminescence Technique
碩士 === 大葉大學 === 電機工程學系 === 97 === In this study, the thermal annealing and then room temperature Photoluminescence (PL) test were performed on “high” quality and “low” quality LED epi-wafers. The annealing temperature was varied from 300℃ to 450℃. The testing results show the PL peak intensity incre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26897897074749804045 |