Amorphous IGZO thin films prepared by sol-gel method and their application for thin-film transistors

碩士 === 逢甲大學 === 材料科學所 === 97 === In this study, we prepared amorphous InGaZnO semiconductor thin films by sol-gel process. The effects of In/(In+Ga) ratio (0.5~1) and heat treatment temperatures on crystalline, resistivity and optical properties for IGZO thin films were discussed. Furthermore, thin...

Full description

Bibliographic Details
Main Authors: Tzu-Yi Yan, 顏子翊
Other Authors: Chien-Yie Tsay
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/70572376880099917897