| Summary: | 碩士 === 義守大學 === 材料科學與工程學系碩士班 === 97 === The main goal of this study is to deposit the dilute-magnetic epitaxial ZnO thin films in the C-plane sapphire substrate by using the RF magnetron sputtering system. It is divided into three parts：(1) to explore the best epitaxial condition of the ZnO thin films, (2) the influence of buffer layers and (3) the doping effect of Mn and Co to the ZnO thin films.
According to the experimental results, the best deposition conditions of epitaxial ZnO thin films are given by the substrate temperature of 500 ℃ and the sputtering time of 30 minutes, which show an excellent crystallization as well as the lowest resistivity of 2.53 × 104 (Ω cm).
From the XRD Phi-scan and the TEM analysis, they confirm that the deposited epitaxial ZnO thin films are grown along the C-axis and the epitaxial relationship is determined to be [0001]ZnO//[0001]Sapphire. On the other hand, the experimental results affirm that the inclusion of buffer layers leads to poor epitaxy. Therefore, the effect of buffer layers is not taken into account further. Combing the best deposition conditions as well as the doping of Mn and Co elements, a prominent effect that the Curie temperature is higher than room temperature is obtained from the magnetic measurements.
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