The Simulation and Analysis of Conventional and Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
碩士 === 義守大學 === 電子工程學系碩士班 === 97 === In this thesis, the characteristics of conventional metamorphic high-electron-mobility transistor (MHEMT) and metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) are simulated and compared. By solving the one-dimensional Poisson’s...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20747738751392880220 |