A study of Ga-Al-doped ZnO ceramic thin film

• Main Authors: Nien-Tes Tai, 戴念澤
• Other Authors: Wen-Pin Weng
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/00041638472936807474

碩士 === 龍華科技大學 === 工程技術研究所 === 97 === The purpose of this study are divided into two major parts: (1) Preparation of ceramic target and (2) Preparation of transparent conductive films. Using RF magnetron sputtering system in the optical glass on the preparation of transparent conductive films. At home-made ceramic target, the target amount of Al2O3-doped, respectively 0wt% to 6wt%, Ga2O3 doping, respectively 6wt% to 0wt%, the two largest doping 6 wt%, each additional reduce the 1wt%, by Zeta Probe and the particle size analyzer to explore adding ceramic powder dispersant (PMAA Mw: 9500, PAA Mw: 240000, PAA Mw: 5000, PMAA Mw: 4000~6000) of the dispersion effect, and the use of SEM and discussion XRD characterization of sintered ceramic materials. Transparent conductive film in the study of physical properties, using SEM, XRD and α-step discussion different doping and thickness for the micro-structure changes, and Hall effect with the UV-VIS analysis of different doping the receptivity of thin films, carrier concentration, mobility and range of visible light waves often the effect of opacity. According to the results, made the traditional ceramic pottery experimental process, heating rate prior to 1000℃ at 3℃/ min and a heating rate at 1℃/ min to 1400℃ dwell temperature 8 h sintering, at different doping of ceramic target materials will be available in 12%~16% shrinkage and 82%~91% relative density. At different doping ratio of home-made targets using RF magnetron sputtering system preparation of transparent conductive films, process conditions to sputtering power of 100W,working stress for about 2.7×10-3torr, deposition time was 60min, the working atmosphere for argon gas (Ar) flow 10sccm, by the study show that, Al2O3 doped to increase resistivity accompanied by increased generation of excessive because ZnAl2O4 crystalline phase, making difficult to sputter sputter when at optical glass, film thickness decreased, on the contrary, Ga2O3 doped miscellaneous volume resistivity has to improve significantly the reduction of up to 2.09×10-3Ω-cm, visible light transmittance is the average rate of about at about 80~85%.