Preparation of ZnO:Ga transparent conductingoxide thin films at room temperature

• Main Authors: Tung-chien Liao, 廖同堅
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/04867396271447857156

碩士 === 龍華科技大學 === 工程技術研究所 === 97 === Gallium-doped zinc oxide films have been grown on glass substrates with and without ZnO buffer layers by r.f. magnetron sputtering at room temperature. In this approach, the grey relational Taguchi method analysis is adopted to solve the coating process with multiple deposition qualities. Optimal coating parameters can then be determined by the gray relational grade as the performance index. The GZO coating parameters (r.f. power, sputtering pressure, O2/(Ar+O2) flow-rate ratios, and deposition time) are optimized by taking into account the multiple performance characteristics (structural, morphological, deposition rate, electrical resistivity, and optical transmittance). The results indicate that with grey relational Taguchi method the electrical resistivity of GZO films is reduced from 9.23×10-3 to 5.77×10-3 Ω-cm and optical transmittance increases from 79.42 to 82.95 %, respectively. The ZnO buffer layer can reduce the electrical resistivity of GZO films from 5.77×10-3 to 2.38×10-3 Ω-cm. It can be anticipated that the room temperature deposition enables these films deposition onto polymeric substrates for flexible optoelectronic devices.