Electrical Analysis of Metal Oxide Semiconductor Device with Rare Earth Oxide Thin Films
碩士 === 銘傳大學 === 電子工程學系碩士班 === 97 === Metal-oxide-semiconductor (MOS) capacitors with Pr2O3/oxynitride laminated gate dielectrics and with La2O3 gate dielectric were fabricated, respectively. The current transportation of Al/Pr2O3/SiON/n-Si devices was studied at temperatures ranging from 300 to 400...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10791465511344439361 |