| Summary: | 碩士 === 銘傳大學 === 電子工程學系碩士班 === 97 === Metal-oxide-semiconductor (MOS) capacitors with Pr2O3/oxynitride laminated gate dielectrics and with La2O3 gate dielectric were fabricated, respectively. The current transportation of Al/Pr2O3/SiON/n-Si devices was studied at temperatures ranging from 300 to 400 K. The dominant conduction mechanism in the laminated gate dielectrics is the hopping conduction at low electric field (<0.6 MV/cm). The determined hopping distance and activation energy is about 1.2 nm and 53±1 meV, respectively. Nevertheless, the Poole–Frenkel emission dominates at high electric field (> 1 MV/cm) and the trap energy level determined from Arrhenius plot is about 0.53±0.01 eV. And the current transportation of Al/La2O3/p-Si devices was studied at temperatures ranging from 300 to 550 K. The dominant conduction mechanism in the gate dielectrics is the Poole-Frenkel emission at low electric field (<0.6 MV/cm) at temperatures ranging from 300 to 400 K. The trap energy level determined from Arrhenius plot is about 0.3±0.01 eV. However, the hopping conduction dominates at high electric field (> 2.2 MV/cm) and the hopping distance and activation energy is determined about 0.33 nm and 0.36±0.01 eV, respectively.
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