Narrow band gap Si-based material (Si1-xGex) processes, analyses and solarcell applications
碩士 === 明道大學 === 材料科學與工程學系碩士班 === 97 === Abstract In this research, the hydrogenated amorphous silicon films (a-Si:H) and hydrogenated silicon germanium (a-SiGe:H) films were deposited using by High-frequency plasma enhanced chemical vapor deposition (HF-PECVD). For intrinsic Si layer research, press...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29003002404262592025 |