The Fabrication and Electrical Characterization of MIS Capacitors Using High-k Aluminum-dopedZrO2 and Zirconium-doped CeO2 as the Insulator Layers
碩士 === 明志科技大學 === 化工與材料工程研究所 === 97 === In this work, high-k zirconium aluminate (ZrAlxOy) was fabricated by using ZrO2 and aluminum metal targets during sputtering process. The amount of Al% is controlled with the RF power. The post-annealing was performed at 7000C, 8500C, and 10000C after thin fil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83894527457585334681 |