Electromigration Behavior and Electrical Reliability of Copper Interconnects in Integrated Circuits
碩士 === 國立中興大學 === 材料科學與工程學系所 === 97 === Electromigration tests of dual-damascene Cu interconnect structures with or without an NH3/He plasma treatment between Cu and SiCN etch stop layer have been performed in this study at 400゜C under a current density of 8 MA/cm2 to investigate the influence of in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01525676773955483304 |