Properties of nickel silicide thin films and nanostructures on SOI substrates
碩士 === 國立中興大學 === 材料科學與工程學系所 === 97 === Metal silicides have been widely used as self-aligned silicde contacts on source, drain and polycrystalline silicon gate regions of complementary metal oxide semiconductor (CMOS) devices to reduce contact and series resistances. As the dimension of microelectr...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/87418044069293941733 |