Properties of nickel silicide thin films and nanostructures on SOI substrates
碩士 === 國立中興大學 === 材料科學與工程學系所 === 97 === Metal silicides have been widely used as self-aligned silicde contacts on source, drain and polycrystalline silicon gate regions of complementary metal oxide semiconductor (CMOS) devices to reduce contact and series resistances. As the dimension of microelectr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/87418044069293941733 |