Reliability Deterioration of Nitrided Gate Oxide Thin Films
碩士 === 國立中興大學 === 材料科學與工程學系所 === 97 === For deep submicron meter process，short channel effect becomes worse and so PMOS device has been changed to surface channel from buried channel by P+ gate poly use. However，P+ gate poly needs to dope by Boron, but device threshold voltage happen shift issue due...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/84796340169496084588 |