Electrical Analysis and Measurement of Ⅲ-ⅤCompound pHEMT
碩士 === 國立中興大學 === 電機工程學系所 === 97 === Ⅲ-Ⅴ compound semiconductor devices are key parts of RF communication applications because they have advantages of high electron mobility, high working frequency, low RF loss, high linearity and low noise. It is so-called “pHEMT” for full name “Pseudomorphic High...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/10968862223101580090 |